Name:
Epitaxial Quartz Base
Function & Application:
In semiconductor epitaxial processes, the quartz base for ion implantation serves as a critical process carrier. Its extreme temperature resistance, chemical inertness, and precise thermal field control support the accurate execution of high-energy ion beam doping. Key functions include high-energy ion beam tolerance, corrosion resistance against gas erosion, and assurance of thermal stability. It is applied in epitaxial layer deposition processes, which are high-temperature processes.
Performance Requirements:
High temperature resistance, corrosion resistance, excellent thermal stability, sandblasted surface, and low impurity content.
No.5177 Qianghua West Road, Dongqian Street, Nanxun District, Huzhou City, Zhejiang Province
+86-572-3032373
+86-572-3033016
The Epitaxial Quartz Base is a precision-engineered component essential for semiconductor epitaxial processes, particularly during high-energy ion implantation. Crafted from ultra-pure fused quartz, it offers exceptional resistance to extreme temperatures, chemical corrosion, and gas erosion, ensuring long-term durability and process reliability.
Designed with a sandblasted surface, the base provides precise thermal field control critical for accurate ion beam doping and uniform epitaxial layer deposition. Its low impurity content minimizes contamination risks, maintaining cleanroom standards and enhancing wafer quality. Ideal for advanced epitaxy equipment, the quartz base supports consistent, high-yield semiconductor manufacturing under demanding high-temperature conditions.